Development of a photosensor based on photo dielectric effect of cadmium sulphide

dc.contributor.authorKumari, TID
dc.contributor.authorJayasumana, MASD
dc.contributor.authorAttygalle, D
dc.date.accessioned2019-10-21T09:31:37Z
dc.date.available2019-10-21T09:31:37Z
dc.description.abstractA photosensor is an electronic component that detects the presence of visible light, infrared radiation, and/ or ultraviolet radiation. A photosensor which changes its electrical capacitance in the presence of visible light was developed based on the photo-dielectric effect of Cadmium Sulphide (CdS). A thin layer of CdS was deposited on Fluorine-doped Tin Oxide glass using chemical bath deposition technique. The optimum photo-dielectric behaviour was observed for chemical bath temperature between 40-45 ºC. After annealing the deposited film at 180-200 ºC, they have shown a band gap in the range of 2.30– 2.40 eV. Photo-capacitance and photoconductivity in dark and visible light illumination showed a significant change, indicating these films are suitable for photo sensing applications.en_US
dc.identifier.conferenceMoratuwa Engineering Research Conference - MERCon 2019en_US
dc.identifier.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.facultyArchitectureen_US
dc.identifier.placeMoraruwa, Sri Lankaen_US
dc.identifier.urihttp://dl.lib.mrt.ac.lk/handle/123/15144
dc.identifier.year2019en_US
dc.language.isoenen_US
dc.subjectChemical Bath Depositionen_US
dc.subjectCadmium Sulphideen_US
dc.subjectBandgapen_US
dc.subjectDielectricen_US
dc.titleDevelopment of a photosensor based on photo dielectric effect of cadmium sulphideen_US
dc.typeConference-Abstracten_US

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